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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG03DXTEV TVS Diode Array for ESD Protection in Portable Electronics B FEATURES ESD Protection: IEC 61000-4-2 Level 4. MILSTD883C-Method 3015-6:Class 3 A1 A B1 DIM A 1 5 C A1 B B1 C D H J P P P Four separate unidirectional configurations for protection Low leakage current<1 A @3Volts Low capacitance Complies to USB 1.1 low speed & high speed specifications 2 D 3 4 MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 H C J APPLICATIONS Cell phone handsets and accessories. Cordless phones. Personal digital assistants (PDA s) Notebooks, desktopsPC, & servers. Portable instrumentation. Set-Top Box, DVD Player. Digital Camera. 1. (TVS) D1 CATHODE 2. COMMON ANODE 3. (TVS) D2 CATHODE 4. (TVS) D3 CATHODE 5. (TVS) D4 CATHODE TESV Marking 5 Type Name 4 MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature ) SYMBOL PPK IPP Tj Tstg RATING 20 1.6 -55 150 -55 150 1 2 3 UNIT W A 1 TA 2 5 4 3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance ) TEST CONDITION It=1mA VRWM=3V IPP=1.6A, tp=8/20 s VR=0V, f=1MHz CJ VR=3.0V, f=1MHz MIN. 5.3 TYP. 13 7.0 MAX. 3.3 5.9 1 13 17 pF 11.5 UNIT V V A V SYMBOL VRWM VBR IR VC 2007. 9. 10 Revision No : 1 1/2 PG03DXTEV NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PEAK PULSE POWER PP P (W) 1K 110 POWER DERATION CURVE RATED POWER OR IPP (%) 100 100 90 80 70 60 50 40 30 20 10 0 0 25 50 Peak Pulse Power 8/20us Average Power 10 1 10 100 75 100 125 150 PULSE DURATION tP (s) AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT IPP (%) 110 12 Waveform Parameters : tr=8s td=20s e -t CJ - VR CAPACITANCE CJ (pF) 100 90 80 70 60 50 40 30 20 10 0 0 5 10 10 8 6 4 2 0 td=lpp/2 15 20 25 30 0 1 2 3 4 5 TIME (s) REVERSE VOLTAGE VR (V) 2007. 9. 10 Revision No : 1 2/2 |
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